Replenish and Relax: Explaining Logarithmic Annealing in Ion-Implantedc-Si

Deep photoluminescence in S&i 1 -,Ge,/Si quantum wells created by ion implantation and annealing

Strong broad photoluminescence similar to that observed in some materials grown by molecular beam epitaxy (MBE) has been observed in Si/Si, -,Ge,/Si quantum wells grown by chemical vapor deposition. As grown, the samples exhibited SiGe band-edge phonon-resolved bound-exciton luminescence, but after being self-implanted with silicon and annealed at 600 “C, a deep broad luminescence band 80-100 m...

The role of Frenkel defect diffusion in dynamic annealing in ion-irradiated Si

The formation of stable radiation damage in crystalline solids often proceeds via complex dynamic annealing processes, involving migration and interaction of ballistically-generated point defects. The dominant dynamic annealing processes, however, remain unknown even for crystalline Si. Here, we use a pulsed ion beam method to study defect dynamics in Si bombarded in the temperature range from ...

Optical absorption measurements of silica containing Si nanocrystals produced by ion implantation and thermal annealing

Optical absorption spectra from silicon-implanted silica slides are shown to contain features due to optical interference. These features, which result from the modified refractive index profile produced by the implant, can readily lead to misinterpretation of absorption spectra. To demonstrate the importance of such effects, silica samples were implanted with 80, 400, and 600 keV Si ions to fl...

Effect of ion mass on the evolution of extended defects during annealing of MeV ion- implanted p-type Si

Defects production and annealing in self-implanted Si

230-keV 28Si ions were implantated into Si( 100) at room temperature with doses from 1014 to 101*/cm2. The samples were analyzed by x-ray double crystal diffractometry and 2-MeV 4He ion channeling spectrometry. The implanted layer has a parallel lattice spacing equal to that of the unimplanted substrate. The perpendicular lattice spacing is larger than that of the unimplanted substrate and is p...